ntgd3133p power mosfet ?20 v, ?2.5 a, p?channel, tsop?6 dual features ? reduced gate charge for fast switching ? ?2.5 v gate rating ? leading edge trench technology for low on resistance ? independent devices to provide design flexibility ? this is a pb?free device applications ? li?ion battery charging ? load switch / power switching ? dc to dc conversion ? portable devices like pda?s, cellular phones, and hard drives maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain?to?source voltage v dss ?20 v gate?to?source voltage v gs 12 v continuous drain current (note 1) steady state t a = 25 c i d ?2.3 a t a = 85 c ?1.6 t 5 s t a = 25 c ?2.5 power dissipation (note 1) steady state t a = 25 c p d 1.1 w t 5 s 1.3 continuous drain current (note 2) steady state t a = 25 c i d ?1.6 a t a = 85 c ?1.2 power dissipation (note 2) t a = 25 c p d 0.56 w pulsed drain current t p = 10 s i dm 7.0 a operating junction and storage temperature t j , t stg ?55 to 150 c source current (body diode) i s ?0.8 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). 2. surface mounted on fr4 board using the minimum recommended pad size. 1 2 3 6 5 4 g1 s2 g2 d1 s1 d2 p?channel mosfe t sc = specific device code m = date code = pb?free package (note: microdot may be in either location) tsop6 case 318g marking diagram (top view) pin connection ?20 v 200 m @ ?2.5 v 145 m @ ?4.5 v r ds(on) max ?2.5 a i d max v (br)dss g1 d1 s1 sc m 1 1 device package shipping ? ordering information NTGD3133PT1G tsop6 (pb?free) 3000/tape & ree l ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specificatio n brochure, brd8011/d. p?channel mosfet g2 d2 s2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 2 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
thermal resistance ratings parameter symbol max unit junction?to?ambient ? steady state (note 3) r ja 115 c/w junction?to?ambient ? t 5 s (note 3) r ja 95 junction?to?ambient ? steady state min pad (note 4) r ja 225 3. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). 4. surface mounted on fr4 board using the minimum recommended pad size. mosfet electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v i d = ?250 a ?20 ? ? v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j ? 14.4 ? mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = ?16 v t j = 25 c ? ? ?1.0 a t j = 85 c ? ? ?10 gate?to?source leakage current i gss v ds = 0 v, v gs = 12 v ? ? 100 na on characteristics (note 5) gate threshold voltage v gs(th) v gs = v ds i d = ?250 a ?0.6 ?0.9 ?1.4 v drain?to?source on resistance r ds(on) v gs = ?4.5 v, i d = ?1.9 a ? 95 145 m v gs = ?2.5 v, i d = ?1.6 a ? 150 200 forward transconductance g fs v ds = ?5.0 v, i d = ?2.5 a ? 4.0 ? s charges, capacitances & gate resistance input capacitance c iss v gs = 0 v, v ds = ?10 v, f = 1.0 mhz ? 390 ? pf output capacitance c oss ? 75 ? reverse transfer capacitance c rss ? 37 ? total gate charge q g(tot) v gs = ?4.5 v, v ds = ?10 v, i d = ?2.2 a ? 3.7 5.5 nc threshold gate charge q g(th) ? 0.7 ? gate?to?source charge q gs ? 1.1 ? gate?to?drain charge q gd ? 1.2 ? switching characteristics (note 6) turn?on delay time t d(on) v gs = ?4.5 v, v dd = ?10 v, i d = ?1.0 a, r g = 6.0 ? 6.7 ? ns rise time t r ? 12.7 ? turn?off delay time t d(off) ? 13.2 ? fall time t f ? 11 ? drain?source diode characteristics forward diode voltage v sd v gs = 0 v, t j = 25 c i s = ?0.8 a ? ?0.8 ?1.2 v reverse recovery time t rr v gs = 0 v, di sd / dt = 100 a/ s, i s = ?1.0 a ? 7.4 ? ns charge time t a ? 4.8 ? discharge time t b ? 2.6 ? reverse recovery charge q rr ? 2.4 ? nc 5. pulse test: pulse width 300 s, duty cycle 2%. 6. switching characteristics are independent of operating junction temperatures. 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 2 ntgd3133p smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
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